High-efficiency waveguide-coupled lambda =1.3 mu m In/sub x/Ga/sub 1-x/As/GaAs MSM detector exhibiting large extinction ratios at L and X band
| Autor: | Daniel Yap, D.L. Persechini, Authi A. Narayanan, R.R. Hayes, Willie W. Ng |
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| Rok vydání: | 1993 |
| Předmět: |
L band
Materials science business.industry Detector X band Photodetector Waveguide (optics) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Active layer Gallium arsenide Responsivity chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 5:514-517 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | The design and fabrication of a 1.3- mu m waveguide-coupled strained-layer In/sub x/Ga/sub 1-x/As/GaAs MSM detector with an optimized active layer thickness is reported. For 100- mu m-long devices, a responsivity of 0.58 mA/mW is observed. Using the detector as an optoelectronic switch, on/off ratios better than 40 dB were achieved at L and X band. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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