The Effects of Interfacial SiO2 on Pd2Si Formation
| Autor: | S. S. Lau, L. Wieluński, R. L. Pfeffer, D. M. Scott, Robert A. Lux, M.-A. Nicolet, J. Mikkelson |
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| Rok vydání: | 1983 |
| Předmět: |
Nuclear reaction
Materials science Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Plasma Mass spectrometry Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Crystallography Nickel chemistry Silicide Materials Chemistry Redistribution (chemistry) Platinum Palladium |
| Zdroj: | Thin Solid Films. 104:227-233 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(83)80001-7 |
| Popis: | We investigated the effects of thin Si 16 O 2 and Si 18 O 2 interfacial layers on Pd 2 Si formation using He + backscattering spectrometry and the 16 O(d,α) 14 N and 18 O(p, α) 15 N nuclear reactions. SiO 2 films from 10 to 50 A thick were formed on Si substrates by 16 O 2 or 18 O 2 plasma oxidation. Nickel, palladium or platinum films from 1000 to 1400 A thick were then evaporated onto this SiO 2 layer and the samples were annealed in vacuum at temperatures ranging from 250 to 750 °C. The minimum temperature necessary for Pd 2 Si formation is approximately 400°C for about 24 A of SiO 2 compared with 600°C for Pt 2 Si and 650°C for Ni 2 Si formation. The ability of Pd 2 Si to form in the presence of an SiO 2 interfacial layer is compared with that of Ni 2 Si and Pt 2 Si and is interpreted using the relative mobilities of the metals in SiO 2 and the redistribution of the 18 O during silicide formation. |
| Databáze: | OpenAIRE |
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