CURRENT OSCILLATIONS IN Co‐DOPED Si p‐i‐n STRUCTURES

Autor:	B.G. Streetman, Nick Holonyak, M.M. Blouke
Rok vydání:	1967
Předmět:	Trap (computing) Materials science Physics and Astronomy (miscellaneous) Atomic physics Current (fluid) Excitation Co doped
Zdroj:	Applied Physics Letters. 11:200-202
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1755096
Popis:	Current oscillations in the positive resistance region of the forward characteristics of Co‐doped Si p‐i‐n devices are described. The oscillations are sinusoidal, independent of device length, and are strongly affected by optical excitation and deep‐level trap properties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90f6937a55ee78d27c62a84309e3aa15 https://doi.org/10.1063/1.1755096 Zobrazit plný text záznamu