360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications
| Autor: | Patrick Fay, Bob Grabar, James M. Chappell, Peter Chen, Isaac Khalaf, Erdem Arkun, Jeong-Sun Moon, M. Antcliffe, Nivedhita Venkatesan, Joel Wong, Andrea Corrion |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier High-electron-mobility transistor Noise figure 01 natural sciences Electronic Optical and Magnetic Materials Low noise Power (physics) 0103 physical sciences Extremely high frequency Optoelectronics Electrical and Electronic Engineering business Communication channel DC bias |
| Zdroj: | IEEE Electron Device Letters. 41:1173-1176 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2020.3005337 |
| Popis: | We report scaled, graded-channel AlGaN/GaN HEMTs with an extrinsic fT and fMAX of 170 GHz and 363 GHz, which is the highest in emerging graded-channel GaN HEMTs. At 50-nm gate length, the fT*Lg of 8.5 GHz $\ast \mu \text{m}$ is comparable to that of conventional scaled AlGaN/GaN HEMTs fabricated together. At low DC power, the scaled graded-channel AlGaN/GaN HEMTs show a higher fMAX than the scaled AlGaN/GaN HEMT with the same gate length. The devices also exhibit a 2 dB improvement in gain at low DC bias, and the measured minimum noise figure was as low as 0.5 dB at 30 GHz. This is comparable to state-of-the-art device noise figure from a 20-nm gate length AlGaN/GaN HEMT. The combination of improved fT, fMAX, and minimum noise figure at low DC power for the graded-channel AlGaN/GaN HEMTs shows great promise for ultra-low-power, low-noise amplifiers. |
| Databáze: | OpenAIRE |
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