Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors
| Autor: | Hiroshi Mizuta, Haroon Ahmed, Shunri Oda, Zahid A. K. Durrani, M. A. H. Khalafalla |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Condensed matter physics Silicon Transistor Metals and Alloys Nanocrystalline silicon Coulomb blockade chemistry.chemical_element Surfaces and Interfaces Grain size Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Coupling (electronics) Nanocrystal chemistry law Materials Chemistry Grain boundary |
| Zdroj: | Thin Solid Films. 487:255-259 |
| ISSN: | 0040-6090 |
| Popis: | Inter-grain electron-coupling effects are investigated at 4.2 K in dual-gated, point-contact, single-electron transistors fabricated in nanocrystalline silicon. The nanocrystalline silicon film is ∼40 nm thick, with grains ∼10–30 nm in size. The point-contact transistor channel is ∼30 nm×30 nm×40 nm in size, with two side-gates. Only a few grains exist within the channel and different grains contribute in varying degrees to the device conduction. By modifying the inter-grain coupling using selective oxidation of the grain boundaries, both electrostatic and wavefunction-coupling effects can be observed in the Coulomb oscillations vs. the two gate voltages. |
| Databáze: | OpenAIRE |
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