Intermetallic Compound Growth and Reliability of Cu Pillar Bumps Under Current Stressing

Autor:	Gi-Tae Lim, Byoung-Joon Kim, Young-Chang Joo, Jaedong Kim, Ho-Young Lee, Young-Bae Park, Kiwook Lee
Rok vydání:	2010
Předmět:	Materials science Kirkendall effect Annealing (metallurgy) Shear force Metallurgy Intermetallic Pillar chemistry.chemical_element Condensed Matter Physics Copper Electronic Optical and Magnetic Materials chemistry Materials Chemistry Electrical and Electronic Engineering Current density Flip chip
Zdroj:	Journal of Electronic Materials. 39:2281-2285
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-010-1324-z
Popis:	Fine-pitch Cu pillar bumps have been adopted for flip-chip bonding technology. Intermetallic compound (IMC) growth in Cu pillar bumps was investigated as a function of annealing or current stressing by in situ observation. The effect of IMC growth on the mechanical reliability of the Cu pillar bumps was also investigated. It is noteworthy that Sn exhaustion was observed after 240 h of annealing when current stressing was not applied, and IMC growth rates were changed remarkably. As the applied current densities increased, the time required for complete Sn consumption became shorter. In addition, Kirkendall voids, which would be detrimental to the mechanical reliability of Cu pillar bumps, were observed in both Cu3Sn/Cu pillars and Cu3Sn/Cu under-bump metallization interfaces. Die shear force was measured for Cu pillar samples prepared with various annealing times, and degradation of mechanical strength was observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90ec24fded2c57e03ff52bda8498093e https://doi.org/10.1007/s11664-010-1324-z Zobrazit plný text záznamu Full text from SpringerLink