Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

Autor:	Masaaki Matsukuma, Kazuhiro Karahashi, Satoshi Hamaguchi, Munehito Kagaya, Tomoko Ito, Hu Li, Tsuyoshi Moriya
Rok vydání:	2020
Předmět:	Atomic layer deposition Molecular dynamics Materials science Physics and Astronomy (miscellaneous) Chemical physics Numerical analysis General Engineering General Physics and Astronomy Plasma Ion bombardment Silicon oxide
Zdroj:	Japanese Journal of Applied Physics. 59:SJJA01
ISSN:	1347-4065 0021-4922
DOI:	10.35848/1347-4065/ab8681
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90e8bb47f44e5ef913372e1fe0d323e0 https://doi.org/10.35848/1347-4065/ab8681 Zobrazit plný text záznamu