Sn Incorporation in Ultrathin InAs Nanowires for Next-Generation Transistors Characterized by Atom Probe Tomography

Autor:	Peter Ramvall, A. Devin Giddings, Yee-Chia Yeo, Aryan Afzalian, Ruey-Lian Hwang, T. Vasen, Matthias Passlack
Rok vydání:	2019
Předmět:	Materials science Dopant business.industry Transistor Nanowire Atom probe Cmos scaling law.invention law Transmission electron microscopy Optoelectronics Particle General Materials Science Metalorganic vapour phase epitaxy business
Zdroj:	ACS Applied Nano Materials. 2:1253-1258
ISSN:	2574-0970
Popis:	Growth of ultrathin semiconducting nanowires (NWs) and incorporation of dopants suitable for future CMOS scaling targets (diameter
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90e51991d43be422c5ec28df5c2148aa https://doi.org/10.1021/acsanm.8b02092 Zobrazit plný text záznamu