UHREM investigation of stacking fault interactions in the CVD diamond structure
| Autor: | D. Dorignac, F. Phillipp, S. Delclos, A.M. Bonnot, S. Moulin |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Material properties of diamond Resolution (electron density) Structure (category theory) Stacking chemistry.chemical_element General Chemistry Chemical vapor deposition Molecular physics Electronic Optical and Magnetic Materials Core (optical fiber) Crystallography chemistry Materials Chemistry Electrical and Electronic Engineering human activities Stacking fault |
| Zdroj: | Diamond and Related Materials. 8:682-687 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(98)00255-6 |
| Popis: | An investigation of complex defect configurations arising from the interaction between stacking faults in diamond thin films prepared by thermal-enhanced chemical vapour deposition (CVD) on silicon substrates is reported. The defects have been determined by ultra-high resolution electron microscopy (UHREM) at 0.12 nm resolution. Extensive image simulation has been used to deduce their detailed core structures and to propose plausible 3D atomic-scale models. Two particularly interesting examples are shown: the first consists of intrinsic and extrinsic stacking faults intersecting to form two opposite stair-rod dislocations, while the second results from the interaction between adjacent extrinsic stacking faults and a parallel twin interface. To our knowledge, this is the first time that such types of extended defect configurations, which are quite representative of the dominant defect structures in CVD diamond, have been reported. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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