Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier
| Autor: | Jung-Hee Lee, Jong-Won Lim, Łukasz Janicki, Jeong-Gil Kim, Seung-Hyeon Kang, Kyung-Wan Kim, Ho-Sang Kwon, Jun-Hyeok Lee, Jeong-Min Ju, Yong Soo Lee, Sang-Heung Lee |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Growth pressure Materials science business.industry Transistor Heterojunction Algan gan 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention Lattice constant law Lattice (order) 0103 physical sciences Materials Chemistry Atomic composition Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business High electron |
| Zdroj: | Solid-State Electronics. 152:24-28 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2018.11.002 |
| Popis: | AlGaN/GaN heterostructures were successfully grown with the AlIn(Ga)N back barrier at 900 °C. However, the atomic composition of the AlIn(Ga)N layer was strongly dependent on the growth pressure, which resulted in a different lattice constant of the layer. The AlIn(Ga)N back barrier grown at 400 torr was almost lattice-matched to GaN layer. The AlGaN/GaN heterostructures with 10 and 15 nm-thick AlIn(Ga)N back barrier exhibited improved 2-DEG properties, compared to those of the conventional AlGaN/GaN heterostructure without the back barrier. The high electron mobility transistors (HEMTs) fabricated on the AlGaN/GaN heterostructure with a 15 nm-thick AlIn(Ga)N back barrier exhibited a very low off-state leakage current of ∼2 × 10−7 A/mm which is about 1 order lower in magnitude than the value of the device without the back barrier. The AlIn(Ga)N back barrier is a promising candidate as an alternative to conventional AlGaN and InGaN back barrier. |
| Databáze: | OpenAIRE |
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