Atom assisted sputtering yield amplification
| Autor: | Ilia Katardjiev, Claes Nender, Sören Berg, B Gelin, AM Barklund |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Argon
Ion beam Physics::Instrumentation and Detectors Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Ion implantation chemistry Physics::Plasma Physics Sputtering Physics::Atomic and Molecular Clusters Thin film Carbon |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1592-1596 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | At first sight one might assume that it is unlikely to influence the sputtering yield of a specific ion/substrate combination by any external means. However, we have found that such an influence may well be introduced. The sputtering yield is predominantly determined by the ion/substrate momentum transfer efficiency and the energy of the incoming ion. Sputter erosion of, e.g., carbon atoms by argon ions from a carbon substrate exhibits a very low sputtering yield. Due to the difference in masses between carbon and argon much of the momentum is transferred into the bulk of the carbon substrate. This situation could be changed by simultaneous codeposition of Pt atoms onto the carbon substrate surface during the argon sputtering. Keeping the argon flux at a level well above what is needed to sputter remove all the deposited Pt atoms the following effect occurs. Some of the deposited Pt atoms will be forward implanted by the energetic argon ions into the near surface region of the carbon substrate. Collision ... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|