Trap Spectroscopy in Si3N4 Ultrathin Films Using Exoelectron Emission Method

Autor:	M. Molotskii, Gil Rosenman, M. Naich, Ya. Roizin
Rok vydání:	2002
Předmět:	Materials science Hydrogen Transistor chemistry.chemical_element Activation energy Electron Spectral line law.invention chemistry.chemical_compound chemistry Silicon nitride law Atomic physics Spectroscopy Exoelectron emission
Zdroj:	MRS Proceedings. 745
ISSN:	1946-4274 0272-9172
Popis:	We developed an original thermally stimulated exoelectron emission spectroscopy method (TSEE) of measurements of the activation energy Φ of electron (hole) traps in ultrathin Si3N4 films. The temperature spectra of TSEE of 50A silicon nitride films demonstrate several peaks: three low temperature peaks (T1 =373K, T2=423K, T3=498K) and a high temperature maximum at T4 ∼750K. The obtained values of the energy activation are Φ1=0.82 eV, Φ2=0.93 eV, Φ3=1.09 eV, and Φ4=1.73 eV. TSEE results are shown to be consistent with Φ estimates obtained from microFLASH® two bit per cell memory transistor measurements. Electrons stored at traps with Φ4=1.73 eV explain excellent microFlash retention properties. We believe that deep traps in Silicon Nitride are Hydrogen containing centers, while Hydrogen hopping is the route cause of observed material degradation in course of TSEE measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90c0a7aed8b96967dafc6ca3abd7f086 https://doi.org/10.1557/proc-745-n5.21 Zobrazit plný text záznamu Full text from SpringerLink