Defect detection strategies and process partitioning for SE EUV patterning (Conference Presentation)
| Autor: | Nelson Felix, Barry Saville, Corey Lemley, Bassem Hamieh, Christopher F. Robinson, Shinichiro Kawakami, Jeffrey C. Shearer, Chet Lenox, Yann Mignot, Takeshi Shimoaoki, Eric Liu, Hiroshi Ichinomiya, Koichiro Tanaka, Ankit Jain, Koichi Hontake, Shravan Matham, Heungsoo Choi, John C. Arnold, Luciana Meli, Anuja De Silva, Benjamin D. Briggs, Ko Akiteru, Hashimoto Yusaku, Lior Huli, Akiko Kai, Dave Hetzer, Karen Petrillo |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Process (engineering) Computer science Extreme ultraviolet lithography Process improvement 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Reliability engineering 0103 physical sciences Key (cryptography) Node (circuits) Process window 0210 nano-technology |
| Zdroj: | Extreme Ultraviolet (EUV) Lithography IX. |
| Popis: | The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e-beam systems, find it difficult to detect the main yield-detracting defects post-develop, and thus understanding the effects of process improvement strategies has become more challenging. New techniques and methodologies for detection of EUV lithography defects, along with judicious process partitioning, are required to develop process solutions that improve yield. This paper will first discuss alternative techniques and methodologies for detection of lithography-related defects, such as scumming and microbridging. These strategies will then be used to gain a better understanding of the effects of material property changes, process partitioning, and hardware improvements, ultimately correlating them directly with electrical yield detractors . |
| Databáze: | OpenAIRE |
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