| Autor: |
D.C. Mayer, D.J. Swanson, B.J. Hill, J.F. Knudsen, D.L. Leung |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1990 IEEE SOS/SOI Technology Conference. Proceedings. |
| DOI: |
10.1109/sossoi.1990.145708 |
| Popis: |
The effect of process parameters on the quality of recrystallized material using rapid thermal processing (RTP) was evaluated. Both X-ray rocking curve and Read camera analysis were used to verify the crystalline quality of the regrown material. It is shown that RTP is a viable method for agglomerating the interfacial oxide at a silicon/polysilicon boundary before epitaxial growth. The material quality was observed to improve with increasing RTP time and temperature cycles. The optimum thermal anneal cycle was 600 degrees C for 18 h and 800 degrees C for 3 h. The improvement in the number of defects over the previously used ion implantation process is about two orders of magnitude. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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