ß-Ga2O3/Si Heterojunction Photodiode with ZnO ARC layer in the UV Detection
| Autor: | Abdullah Yildiz, Abdullah Atilgan, Ugur Harmanci, Nur Efsan Koksal |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Spin coating
Materials science business.industry 020209 energy 020208 electrical & electronic engineering Heterojunction 02 engineering and technology Photodiode law.invention Arc (geometry) law 0202 electrical engineering electronic engineering information engineering Optoelectronics Antireflection coating Uv detection business Layer (electronics) |
| Zdroj: | 2019 11th International Conference on Electrical and Electronics Engineering (ELECO). |
| DOI: | 10.23919/eleco47770.2019.8990415 |
| Popis: | In this work, a new Ga 2 O 3 /p-Si photodiodes with ZnO ARC layer are formed by sol-gel spin coating technique. Upon 254 nm and 395 nm UV illuminations, the device’s performances were examined in terms of electrical parameters. Under a 254 nm, a good photoresponse behavior was observed. Also, lower ideality factor and higher barrier height is obtained from current-voltage characteristics. The device is solarblind since the device does not show any significant improvement upon 395 nm. This study with combination of ZnO antireflection coating layer is prominent candidate for UV solar-blind optoelectronic devices. |
| Databáze: | OpenAIRE |
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