Isomerization model for photo-induced effects in a-Si:H
| Autor: | David Adler, Tadashi Shiraishi, Shumpei Yamazaki |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Quantitative Biology::Biomolecules
Silicon Stereochemistry Relaxation (NMR) Dangling bond chemistry.chemical_element Electron Trapping Condensed Matter Physics Photochemistry Electronic Optical and Magnetic Materials chemistry Metastability Materials Chemistry Ceramics and Composites Oxygen impurity Isomerization |
| Zdroj: | Journal of Non-Crystalline Solids. 68:167-174 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(84)90001-2 |
| Popis: | We report the results of new experimental data which indicate that oxygen impurities strongly enhance the Staebler-Wronski effect in a-Si:H films. These results suggest an isomerization model in which charged silicon dangling bonds are stabilized by hydrogen-like bonds between SiOH groups and the defect centers. Trapping of the photo-excited electrons and holes near the charged dangling bonds initiates a local structural relaxation that brings about the metastable light-soaked state. This model is consistent with a wide variety of data on photo-induced effects in a-Si:H. |
| Databáze: | OpenAIRE |
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