Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application

Autor:	Tom Herrmann, Alban Zaka, Zhixing Zhao, Binit Syamal, Wafa Arfaoui, Ruchil Jain, Ming-Cheng Chang, Sameer Jain, Shih Ni Ong
Rok vydání:	2023
Předmět:	Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Solid-State Electronics. 199:108512
ISSN:	0038-1101
DOI:	10.1016/j.sse.2022.108512
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9080e67d663ab8098c988e921925f848 https://doi.org/10.1016/j.sse.2022.108512 Zobrazit plný text záznamu Full Text from ScienceDirect