Variable range hopping conductivity in Si:As bolometers

Autor:	P. Fozooni, C.C. Zammit, M. J. Lea, A.D. Caplin, John Saunders, J. Kennefick
Rok vydání:	1990
Předmět:	Materials science Condensed matter physics Dopant Phonon Bolometer Thermal contact Electron Conductivity Condensed Matter Physics Variable-range hopping Electronic Optical and Magnetic Materials law.invention law Exponent Electrical and Electronic Engineering
Zdroj:	Physica B: Condensed Matter. :317-318
ISSN:	0921-4526
Popis:	The temperature dependent resistance R(T) of ion-implanted Si:As bolometers has been measured in the variable range hopping regime, with R(T) = CT 2m eχp( T m T ) m , for 1.6 > T > 0.2 K . The exponent m changed from 0.5 to 0.28 as the dopant concentration approached the metal-insulator transition. These sensitive bolometers, with an implant depth of 0.1 microns, are limited by the thermal contact between electrons and phonons below 0.1K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::906e7d72d7bf78c832e980924d4ec04d https://doi.org/10.1016/s0921-4526(90)81008-c Zobrazit plný text záznamu