Performance of In0.47Ga0.53As metal-semiconductor-metal hybrid receiver at 1.55 ?m
| Autor: | Y. H. Kwark, P. C. Wong, G. D. Pettit, Franklin F. Tong, D. T. McInturff, S. E. Ralph |
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| Rok vydání: | 1993 |
| Předmět: |
Transimpedance amplifier
Materials science business.industry Preamplifier Photodetector Optical power Pseudorandom binary sequence Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Bit error rate Optoelectronics MESFET Electrical and Electronic Engineering Telecommunications business Sensitivity (electronics) |
| Zdroj: | Optical and Quantum Electronics. 25:699-703 |
| ISSN: | 1572-817X 0306-8919 |
| DOI: | 10.1007/bf00430559 |
| Popis: | We report on the performance at 1.55 μm of a hybrid receiver combining an In0.47Ga0.53As metal-semiconductor-metal photodetector (with buried AllnAs buffer layer) with a GaAs MESFET preamplifier. A bit error rate of 10-9 is measured at 1 Gbps with nonreturn to zero pseudorandom bit sequence (215–1) at a received optical power of −19 dBm. Modification of the preamplifier design and a reduction of bond pad size could improve the sensitivity by ∼6–7 dB. |
| Databáze: | OpenAIRE |
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