Heteroepitaxial growth of nonlinear optical materials for frequency conversion in the mid and longwave IR
| Autor: | David H. Tomich, Chandriker Kavir Dass, Vladimir Tassev, Shivashankar Vangala |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Hydride Vapor phase Longwave 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Inorganic Chemistry Nonlinear optical Frequency conversion Lattice (order) 0103 physical sciences Materials Chemistry Optoelectronics 0210 nano-technology business Ternary operation |
| Zdroj: | Journal of Crystal Growth. 522:210-213 |
| ISSN: | 0022-0248 |
| Popis: | We report recent results on heteroepitaxy of ZnSe on GaAs, GaSe on GaP, GaAs and GaN substrates, and GaAsxP1−x ternaries on GaAs, as well growths of OPGaP, OPGaAsP and OPZnSe on orientation-patterned (OP) GaAs templates. ZnSe and GaSe were chosen for their wide IR transparency and good NLO properties, taking advantages from the close lattice match of ZnSe to GaAs, α–Ga4Se6 (cubic) to GaP and GaAs, and β–GaSe (hexagonal) to GaN. For the same reason growth of OPGaP was attempted on OPGaAs templates. As for the GaAsxP1−x ternaries, the idea was to determine whether these ternaries can combine in one material the lower 2-photon absorption of GaP with the higher nonlinear susceptibility of GaAs since a GaAsxP1−x ternary always has a closer lattice match to either GaAs or GaP than the two parenting materials. Up to 500 µm thick layers grown by Hydride Vapor Phase Epitaxy (HVPE) on plain substrates and up to 300 µm thick OP structures grown on OP templates revealed smooth surface morphology (RMS |
| Databáze: | OpenAIRE |
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