Effect of annealing on the properties of Cu 3 BiS 3 thin films deposited via chemical bath deposition
| Autor: | S. G. Deshmukh, Vipul Kheraj, Ashish K. Panchal |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Diffraction Materials science Band gap Annealing (metallurgy) Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences symbols.namesake 0103 physical sciences symbols Orthorhombic crystal system Crystallite Thin film 0210 nano-technology Raman spectroscopy Chemical bath deposition |
| Zdroj: | Materials Today: Proceedings. 5:10712-10716 |
| ISSN: | 2214-7853 |
| DOI: | 10.1016/j.matpr.2017.12.353 |
| Popis: | Cu3BiS3 is an absorber material for thin film solar cells with an optimal band gap of 1.10-1.72 eV, high absorption coefficient (>105 cm-1) and abundant constituents. In this paper, the effect of annealing on the properties of chemical bath deposited (CBD) Cu3BiS3 thin films is reported. The annealed Cu3BiS3 thin films were characterized by using the X-ray diffraction (XRD) and Raman spectroscopy. The XRD analysis revealed the formation of polycrystalline Cu3BiS3 thin films with orthorhombic crystal structure at 673K. The average crystallite size as calculated from the Debye-Scherrer’s formula was found to be 22.09 nm for (131) peak. Raman spectra showed a leading peak at 282 cm-1 that is a characteristic of Cu3BiS3. |
| Databáze: | OpenAIRE |
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