Gallium nitride nanowires by maskless hot phosphoric wet etching

Autor:	A. M. Hosalli, D. M. Van Den Broeck, Joshua P. Samberg, Nadia A. El-Masry, D. Bharrat, Salah M. Bedair
Rok vydání:	2013
Předmět:	Materials science Photoluminescence Physics and Astronomy (miscellaneous) business.industry Nanowire Wide-bandgap semiconductor Gallium nitride Indium gallium nitride Full width at half maximum chemistry.chemical_compound Nanolithography chemistry Etching (microfabrication) Optoelectronics business
Zdroj:	Applied Physics Letters. 103:082106
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4819272
Popis:	We demonstrate gallium nitride (GaN) nanowires formation by controlling the selective and anisotropic etching of N-polar GaN in hot phosphoric acid. Nanowires of ∼109/cm,2 total height of ∼400 nm, and diameters of 170–200 nm were obtained. These nanowires have both non-polar {11¯00}/ {112¯0} and semi-polar {1011¯} facets. X–Ray Diffraction characterization shows that screw dislocations are primarily responsible for preferential etching to create nanowires. Indium gallium nitride multi-quantum wells (MQWs) grown on these GaN nanowires showed a blue shift in peak emission wavelength of photoluminescence spectra, and full width at half maximum decreased relative to MQWs grown on planar N-polar GaN, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90331f65c136536a04a2370519ba32b0 https://doi.org/10.1063/1.4819272 Zobrazit plný text záznamu