| Autor: |
Z. Huszka, F. Stein, N. Derrier, Didier Celi, Cristell Maneux |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM). |
| DOI: |
10.1109/bctm.2012.6352638 |
| Popis: |
The base-emitter (BE) depletion charge weighting factor h jei accounts for the variation of the BE space charge region (SCR) with bias. In former HICUM model releases this weighting factor was a fixed model parameter value independent of device bias or temperature. With recent technology advancements and aggressively scaled vertical profiles incorporating significant germanium fractions a new model formulation was introduced. However the increased model complexity calls for a more sophisticated parameter extraction strategy. A novel extraction method is presented that is based on the solution of the new HICUM L2.30 formulation with the help of the Lambert W function. The extraction flow is presented and validated using a mature BiCMOS process technology available for mass-production. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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