Quaternary bismide alloy ByGa1−yAs1−xBix lattice matched to GaAs

Autor:	Daniel A. Beaton, Angelo Mascarenhas, Aaron J. Ptak, Kirstin Alberi
Rok vydání:	2012
Předmět:	Materials science Band gap Exciton Alloy chemistry.chemical_element engineering.material Condensed Matter Physics Bismuth Inorganic Chemistry Crystallography chemistry Atom Materials Chemistry engineering Boron Solid solution Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 351:37-40
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2012.04.028
Popis:	We report on the lattice matched quaternary alloy, B y Ga 1 − y As 1 − x Bi x grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi : B ≃ 1.3 : 1 . The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::901ae84eb0d2b4d978b1562d9ef170e0 https://doi.org/10.1016/j.jcrysgro.2012.04.028 Zobrazit plný text záznamu Full Text from ScienceDirect