Effect of radiation and endurance on pulsed programming of commercial NAND Flash memory
| Autor: | Avyaya J. Narasimham, Andrew A. Gonzalez, K. Michael Han, Jean Yang-Scharlotta |
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| Rok vydání: | 2017 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Silicon 010308 nuclear & particles physics business.industry Nand flash memory chemistry.chemical_element Electron Radiation 01 natural sciences Trap (computing) Stress (mechanics) chemistry Ionization 0103 physical sciences Optoelectronics Linear correlation business |
| Zdroj: | 2017 IEEE International Integrated Reliability Workshop (IIRW). |
| Popis: | Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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