Design and Fabrication of AlGaAs-based 1.8eV Schottky Solar Cell
| Autor: | Amirhossein Ghods, Ian T. Ferguson, Chuanle Zhou, Andrew Woode, Vishal Saravade |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Fabrication Materials science business.industry Band gap Schottky barrier Photovoltaic system Schottky diode Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention law 0103 physical sciences Solar cell Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc40753.2019.8980472 |
| Popis: | In this paper, Schottky junction solar cells fully based on Al 0.3 Ga 0.7 As with optical band gap energy of 1.8 eV are designed, fabricated, and characterized. In solar cells based on AlGaAs/GaAs heterostructure, AlGaAs is mostly used as window or electron barrier layer, while GaAs is used as active photon absorbing layer. This work is among the first reports of AlGaAsbased Schottky solar cells. AlGaAs/GaAs heterojunction grown using molecular beam epitaxy (MBE) is used for fabrication of photovoltaic devices. Photovoltaic properties of solar cells are reported, along with experimental details of device fabrication and characterization. The optimized bandgap energy of 1.8eV makes this structure suitable for use in III-V//Si wide-bandgap multi-junction solar cells. |
| Databáze: | OpenAIRE |
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