RTD/HFET low standby power SRAM gain cell
| Autor: | Alan Seabaugh, Iii. E.A. Beam, J.P.A. van der Wagt |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering Substrate (electronics) Electronic Optical and Magnetic Materials law.invention Power (physics) law Memory cell Optoelectronics Static random-access memory Electrical and Electronic Engineering business Standby power Quantum tunnelling Diode |
| Zdroj: | IEEE Electron Device Letters. 19:7-9 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.650335 |
| Popis: | A 50-nW standby power compound semiconductor tunneling-based static random access memory SRAM (TSRAM) cell is demonstrated by combining ultralow current-density resonant-tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) in one integrated process on an InP substrate. This power represents over two orders of magnitude improvement over previous III-V static memory cells. By increasing the number of vertically integrated RTD's we obtain a 100 nW tri-state memory cell. The cell concept applies to any material system in which low current-density negative differential resistance devices are available. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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