Spectroscopic studies of O-vacancy defects in transition metal oxides
| Autor: | Patrick S. Lysaght, Hyungtak Seo, Jan Lüning, Gerald Lucovsky, S. Lee, J. E. Rowe, M. D. Ulrich, L. B. Fleming, Gennadi Bersuker |
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| Rok vydání: | 2007 |
| Předmět: |
Zirconium
Materials science Inorganic chemistry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Silicate Electronic Optical and Magnetic Materials chemistry.chemical_compound Transition metal Nanocrystal chemistry Ab initio quantum chemistry methods Vacancy defect Phase (matter) Grain boundary Electrical and Electronic Engineering |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 18:263-266 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-007-9192-x |
| Popis: | Dielectrics comprised of nano-crystalline HfO2 in gate stacks with thin SiO2/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO2 and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin |
| Databáze: | OpenAIRE |
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