Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

Autor:	D.Y. Kim, G.S. Kim, S.M. Jeon, M.Y. Cho, H.Y. Choi, M.S. Kim, D.-Y. Lee, J.S. Kim, G.-S. Eom, J.-Y. Leem
Rok vydání:	2010
Předmět:	Materials science Annealing (metallurgy) Quantum dot General Physics and Astronomy General education Advanced materials Engineering physics Nano manufacturing
Zdroj:	Acta Physica Polonica A. 117:941-944
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.117.941
Popis:	D.Y. Kim, G.S. Kim, S.M. Jeon, M.Y. Cho, H.Y. Choi, M.S. Kim, D.-Y. Lee, J.S. Kim, J.S. Kim, G.-S. Eom, J.-Y. Leema,∗ Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea Lighting Module Research and Development, Samsung Electro-Mechanics Co., Ltd., Suwon 443-373, Korea Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Korea Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea Division of General Education, Uiduk University, Gyeongju 780-713, Korea
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90030e17e36a14412d786861e79b755f https://doi.org/10.12693/aphyspola.117.941 Zobrazit plný text záznamu Plný text ve formátu PDF