Electrical and optical properties of high performance MOCVD grown (AlxGa1−x)yIn1−yP visible light-emitting diodes

Autor:	D.V. Morgan, R.W. Bunce, Y.H. Aliyu, T. Bos, S. Barnes
Rok vydání:	1993
Předmět:	Materials science business.industry Quaternary compound Chemical vapor deposition Epitaxy law.invention law Saturation current Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Light-emitting diode Diode Visible spectrum
Zdroj:	Electronics Letters. 29:1991
ISSN:	0013-5194
DOI:	10.1049/el:19931326
Popis:	Electrical and optical properties of high performance (AlxGa1−x)yIn1−yP light emitting diodes (LEDs) are described. The current transport mechanism is dominated by surface recombination. The orange diodes exhibit a lower surface recombination current level than the corresponding yellow and green LEDs. The device performances compare favourably with the commercially available LEDs in the orange to green spectral region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::90018d78230bc12d3844bfbcdfc8649d https://doi.org/10.1049/el:19931326 Zobrazit plný text záznamu