Nitridation effects of GaP(111)B substrate on MOCVD growth of InN

Autor:	Akihiro Hashimoto, Akio Yamamoto, Ashraful G. Bhuiyan, R Ishigami
Rok vydání:	2000
Předmět:	Inorganic Chemistry Crystallography Materials science Reflection high-energy electron diffraction X-ray photoelectron spectroscopy Materials Chemistry Substrate (electronics) Chemical vapor deposition Crystallite Metalorganic vapour phase epitaxy Condensed Matter Physics Epitaxy Nitriding
Zdroj:	Journal of Crystal Growth. 212:379-384
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(00)00322-5
Popis:	InN films have been grown on GaP(1 1 1)B substrate using metalorganic chemical vapor deposition (MOCVD). Nitridation effects of GaP(1 1 1)B substrate on MOCVD growth of InN have been clarified. It is revealed that single crystalline InN films can be obtained on GaP(1 1 1)B only when the nitridation of the substrate is not made intentionally. InN films grown on nitrided GaP(1 1 1)B are found to be polycrystalline. XPS analysis shows the formation of PNx as well as GaN after the nitridation of GaP(1 1 1)B substrate surfaces by flowing NH3 above 500°C. Formation of PNx is responsible for the poor crystalline structure of InN. Differences in nitridation behavior between GaP and GaAs are also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8ff02086ab1306243930f860834b6586 https://doi.org/10.1016/s0022-0248(00)00322-5 Zobrazit plný text záznamu Full Text from ScienceDirect