Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power

Autor:	G. Kipshidze, Leon Shterengas, Takashi Hosoda, Gregory Belenky, Rui Liang
Rok vydání:	2013
Předmět:	Materials science Multi-mode optical fiber business.industry Slope efficiency Laser law.invention Optics Etching (microfabrication) law Continuous wave Optoelectronics Dry etching Electrical and Electronic Engineering business Quantum well Diode
Zdroj:	Electronics Letters. 49:667-669
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el.2013.0804
Popis:	Single spatial mode GaSb-based type-I quantum well diode lasers operating near 3 μm at room temperature were designed and fabricated by chlorine-free dry etching technique. The etching profile was optimised to minimise the optical loss. The 5.5 μm-wide ridge lasers demonstrated the same slope efficiency as that of 100 μm-wide multimode devices and generated 37 mW of continuous-wave output power at 17°C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8fef86684b089cebe3904f0e0caaed75 https://doi.org/10.1049/el.2013.0804 Zobrazit plný text záznamu Plný text