Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures
| Autor: | Ying-Jay Yang, K. M. Chen, T.-J. Hung, J.-L. Yen, C. H. Jiang, Jin-Wei Shi |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Aperture Single-mode optical fiber Physics::Optics Near and far field Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Vertical-cavity surface-emitting laser Semiconductor laser theory Wavelength Optics law Optoelectronics Electrical and Electronic Engineering business Lasing threshold |
| Zdroj: | IEEE Photonics Technology Letters. 18:481-483 |
| ISSN: | 1041-1135 |
| Popis: | In this letter, we demonstrate a vertical-cavity surface-emitting laser (VCSEL) with a petal-shaped light-emitting aperture, which is realized by the Zn-diffusion technique, at a wavelength of 850 nm. The demonstrated device behaves like a two-dimensional VCSEL array and each light-emitting unit can have high coherence of in-phase lasing to form a near fundamental supermode emission. The measured far-field distributions of such a device exhibit single-lobe (spot), high-power (>7.5 mW), and narrow divergence angle (~6deg) performance under a wide range of bias current. The ratio of in-phase lasing mode to total lasing modes, which include isolated single mode, in-phase, and out-of-phase modes, has also been analyzed by the measured far-field distributions and the theoretically calculated patterns |
| Databáze: | OpenAIRE |
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