Toward High Bias‐Stress Stability P‐Type GaSb Nanowire Field‐Effect‐Transistor for Gate‐Controlled Near‐Infrared Photodetection and Photocommunication

Autor:	Zixu Sa, Fengjing Liu, Xinming Zhuang, Yanxue Yin, Zengtao Lv, Mingxu Wang, Jie Zhang, Kepeng Song, Feng Chen, Zai‐xing Yang
Rok vydání:	2023
Předmět:	Biomaterials Electrochemistry Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Advanced Functional Materials.
ISSN:	1616-3028 1616-301X
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8fcd3dd660091512a6b7440d635b0c3a https://doi.org/10.1002/adfm.202304064 Zobrazit plný text záznamu Plný text