Free-volume defects investigation of GeS 2 -Ga 2 S 3 -CsI chalcogenide glasses by positron annihilation spectroscopy
| Autor: | Junpeng Li, Tengyu Zhang, Zhaohuang Huang, Feifei Ying, Guoxiang Wang, Changgui Lin, Maozhong Li, Rui Zhang, Qiuhua Nie, Bingchuan Gu, Xiang Shen, Bangjiao Ye |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Void (astronomy) Materials science Chalcogenide Chalcogenide glass 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Positron trapping Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Positron annihilation spectroscopy chemistry.chemical_compound chemistry 0103 physical sciences Glassy matrix 0210 nano-technology Atomic density Positron annihilation |
| Zdroj: | Infrared Physics & Technology. 83:238-242 |
| ISSN: | 1350-4495 |
| DOI: | 10.1016/j.infrared.2017.04.012 |
| Popis: | The transformation behavior of free-volume defect in (80GeS2-20Ga2S3)100-x (CsI)x (x = 0, 5, 10, 15 mol%) chalcogenide glasses was studied by employing positron annihilation spectroscopic technique, which could reveal valuable information for in-depth understanding of nano-structural defects in glassy matrix. The results indicate that the structural changes caused by CsI additives can be adequately described by positron trapping modes determined with two-state model. The initial addition of CsI (x = 5 mol%) led to a void contraction, whereas, the void agglomeration occurred with the increase of CsI and the free-volume defects of the glasses were obviously reduced. The atomic density ρ is inversely proportional to the number of these defects. Meanwhile, the UV cut-off edge shifts toward short-wavelength with increasing of CsI. This study provides the valuable information of defects evolution in GeS2-Ga2S3-CsI glasses. |
| Databáze: | OpenAIRE |
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