Germanium vertical Tunneling Field-Effect Transistor

Autor:	D. Hahnel, Jürgen H. Werner, M. Sarlija, Jörg Schulze, O. Kirfel, A. Karmous, Michael Oehme, Inga A. Fischer, M. Schmid
Rok vydání:	2011
Předmět:	Materials science Silicon business.industry Tunneling field effect transistor Transistor Electrical engineering chemistry.chemical_element Germanium Condensed Matter Physics Electronic Optical and Magnetic Materials Ion law.invention chemistry law Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Quantum tunnelling Molecular beam epitaxy
Zdroj:	Solid-State Electronics. 62:132-137
ISSN:	0038-1101
DOI:	10.1016/j.sse.2011.03.011
Popis:	The first realization of a pure Germanium bulk vertical Tunneling Field-Effect Transistor (vTFET) and a high Ion/Ioff ratio for a pure Silicon bulk vTFET are both reported. The manufacturing process, the electrical characteristics and key features and the differences of the two varieties of vTFET devices (pure Germanium bulk vTFET and pure Silicon bulk vTFET) will be discussed in detail.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8fa5d3bde4c0ed1ba08b931c4592949b https://doi.org/10.1016/j.sse.2011.03.011 Zobrazit plný text záznamu Full Text from ScienceDirect