Positron annihilation study of low pressure chemical vapor deposited silicon nitride films

Autor:	Rudi A. Hakvoort, W. M. Arnold Bik, F. H. P. M. Habraken, A. van Veen, H. Schut
Rok vydání:	1991
Předmět:	Materials science Physics and Astronomy (miscellaneous) Passivation Annealing (metallurgy) Analytical chemistry Physics::Optics Chemical vapor deposition Nitride chemistry.chemical_compound Ion implantation Positron Silicon nitride chemistry Thin film
Zdroj:	Applied Physics Letters. 59:1687-1689
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.106218
Popis:	Doppler S‐parameter measurements have been performed on low‐pressure chemical vapor deposited (LPCVD) Si3N4 samples. Annealing of the samples at 1000 °C for times up to 1 h resulted in a decrease of both the S parameter and the positron diffusion length of the silicon nitride. The diffusion length recovers after reimplantation of deuterium, but the S parameter remains low. The data are discussed using a model also applied to understand some electrical properties of the LPCVD nitride.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8fa3df414734975d4b60f9ed712a3520 https://doi.org/10.1063/1.106218 Zobrazit plný text záznamu