A Practical AC Large-Signal Model for GaAs Microwave MESFETs
| Autor: | A. Madjar, F.J. Rosenbaum |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Engineering
Condensed Matter::Other business.industry Semiconductor properties Electrical engineering Large-signal model Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Terminal (electronics) Component (UML) Hardware_INTEGRATEDCIRCUITS business Microwave Voltage |
| Zdroj: | MTT-S International Microwave Symposium Digest. |
| DOI: | 10.1109/mwsym.1979.1124081 |
| Popis: | An AC large-signal model for the GaAs FET is presented. It incorporates the device geometry and semiconductor properties and relates the terminal currents to the instantaneous applied voltages and their derivatives. Its form is suitable for large-signal component design and optimization. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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