Metal Bonding in SiC Based Substrates
| Autor: | Hervé Roussel, Bernard Chenevier, Stephane Coindeau, C. Richtarch, I. Matko, Fabrice Letertre, Lea Di Cioccio, Roland Madar |
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| Rok vydání: | 2005 |
| Předmět: |
Diffraction
Materials science Annealing (metallurgy) Mechanical Engineering Condensed Matter Physics Crystallography chemistry.chemical_compound chemistry Mechanics of Materials Transmission electron microscopy Sic substrate Silicide General Materials Science Composite material Single crystal Smart Cut Metallic bonding |
| Zdroj: | Materials Science Forum. :781-784 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.483-485.781 |
| Popis: | QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially. |
| Databáze: | OpenAIRE |
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