Thermoelectric Properties of Half-Heusler Compounds N-type MNiSn and P-type MPtSn (M = Hf, Zr)

Autor:	Taiki Lee, Yoshisato Kimura, Tomoya Kuji, Yoshinao Mishima, Akihisa Zama
Rok vydání:	2006
Předmět:	Zone melting Materials science Thermal conductivity Electrical resistivity and conductivity Thermoelectric effect Doping Analytical chemistry Figure of merit Thermoelectric materials Thermal conduction
Zdroj:	MRS Proceedings. 980
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-980-0980-ii04-03
Popis:	To design and to develop Half-Heusler based high-temperature thermoelectric materials, thermoelectric properties of n-type MNiSn and p-type MPtSn (M = Hf, Zr) were investigated based on two respective strategies. For the n-type (Hf, Zr)NiSn, a combined process of optical floating zone melting and hot-pressing was applied aiming to reduce thermal conduction through the lattice contribution. For the p-type HfPtSn, power factor and hence figure of merit ZT were dramatically improved by the p-type doping of Ir and Co targeting for Pt-site, which effectively lower electrical resistivity. The additions of Ir and Co are expected not only to increase carrier concentration but also to suppress the lattice thermal conduction by substituting for Pt.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8f8a0c8fe1b2593632c20def6d1bc0be https://doi.org/10.1557/proc-980-0980-ii04-03 Zobrazit plný text záznamu Full text from SpringerLink