Analysis of the microstructural evolution of silicon nitride irradiated with swift Xe ions
| Autor: | Arno Janse van Vuuren, Maxim V. Zdorovets, A. Ibrayeva, V.A. Skuratov |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Process Chemistry and Technology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Fluence Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion chemistry.chemical_compound Thermal conductivity Silicon nitride chemistry Transmission electron microscopy 0103 physical sciences Materials Chemistry Ceramics and Composites Radiation damage Irradiation Crystallite 0210 nano-technology |
| Zdroj: | Ceramics International. 46:7155-7160 |
| ISSN: | 0272-8842 |
| Popis: | The evolution of 220 MeV Xe ion induced radiation damage in polycrystalline Si3N4 is studied, within the fluence range 5 × 1011– 2 × 1014 cm−2, using transmission electron microscopy techniques. These irradiation conditions allow for the study of track morphology in both crystalline and in radiation-amorphized Si3N4. The average track size in the polycrystalline samples is 1.9 ± 0.4 nm and 3.1 ± 0.5 nm in the radiation-amorphized samples. The larger track sizes in the radiation-amorphized material is in agreement with predictions of the inelastic thermal spike model and the role of thermal conductivity in latent track formation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect