Porphyrin induced changes in charge transport of graphene FET
| Autor: | Mangalampalli Ravikanth, Anil Kottantharayil, Ashwini S. Gajarushi, V. Ramgopal Rao, Mrinalini G. Walawalkar, Dawuth Pathan, Tejas R. Naik |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Graphene Doping chemistry.chemical_element Free base Nanotechnology Charge (physics) 02 engineering and technology Zinc 021001 nanoscience & nanotechnology Graphene field effect transistors 01 natural sciences Porphyrin law.invention chemistry.chemical_compound chemistry law Logic gate 0103 physical sciences 0210 nano-technology |
| Zdroj: | 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). |
| DOI: | 10.1109/nano.2016.7751514 |
| Popis: | The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)-TTPOH) and its free base counterpart. We propose that, the porphyrin induces p - type doping in graphene. |
| Databáze: | OpenAIRE |
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