Balancing temperature dependence of on-wafer SOS inductors
Autor: | Päivi H. Karjalainen, Eero Ristolainen |
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Rok vydání: | 2006 |
Předmět: |
Materials science
Silicon business.industry Electrical engineering chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Inductor Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) Inductance Parasitic capacitance chemistry Electromagnetic coil Optoelectronics Wafer Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
Zdroj: | Microelectronics Reliability. 46:1071-1079 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2005.09.003 |
Popis: | The inductance and the quality factor ( Q ) of on-wafer inductors have a strong temperature dependence. For balancing unwanted temperature-induced variation, two different layout structures for silicon-on-sapphire (SOS) inductors were studied. One test series used metal inductors with a varying number of vias and the other metal inductors with silicon-based coils added. The tested silicon coil materials were polysilicon and n-diffusion and p-diffusion silicon. At the temperature of 423 K, the metal inductor with the highest number of vias gave less decreased Q . A silicon coil increases the parasitic capacitance of the inductor, which decreases the self-resonant frequency. Thus, the Q of the inductor with the polysilicon coil was equal to or better than that of the plain metal inductor up to the frequency of 8 GHz. Furthermore, the polysilicon coil balanced the temperature dependent variations reflected to the inductance and the self-resonant frequency. The inductor with the polysilicon coil had the best and the most stable characteristics in the measured temperature range, from 233 K to 423 K. The present results are important for the design of System-in-Package (SiP) stacked systems in which local power densities may be increased. |
Databáze: | OpenAIRE |
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