Structural and electrical characterisation of high-k ZrO2 thin films deposited by chemical spray pyrolysis method
| Autor: | Malle Krunks, Atanas Katerski, Arvo Mere, Ilona Oja Acik, Abayomi T. Oluwabi |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Annealing (metallurgy) Band gap Metals and Alloys 02 engineering and technology Surfaces and Interfaces Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid symbols.namesake Chemical engineering Materials Chemistry symbols Thin film 0210 nano-technology Raman spectroscopy High-κ dielectric Monoclinic crystal system |
| Zdroj: | Thin Solid Films. 662:129-136 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2018.07.035 |
| Popis: | As the applicability of high-k oxides in field-effect transistor became enormous, the physical and chemical understanding of their dielectric properties as well as preparation technique should be diligently studied. Herein, we have studied the deposition of zirconium oxide (ZrO2) thin film by chemical spray pyrolysis and we have investigated the influences of deposition temperature (200, 300, 400, 500 °C) and annealing temperature (500, 800 °C) on the morphological, structural, optical, and electrical properties of the film. It was observed that the as-deposited ZrO2 thin films at temperature below 500 °C were smooth, dense, and structurally amorphous – while the ZrO2 thin film deposited at 500 °C are poorly crystalline. As confirmed by Raman and X-ray diffraction peak deconvolution, ZrO2 tetragonal phase was predominant in the film upon annealing at 500 °C, and the monoclinic phase favoured after annealing at 800 °C. As-deposited ZrO2 thin film are optically transparent (above 80% in the visible region) with a slight decrease in transmittance upon annealing at higher temperature. The optical band gap of ZrO2 film was in the range 5.39–5.68 eV and the dielectric constant (k) in the range 4.3–13.0, depending on the deposition temperature. |
| Databáze: | OpenAIRE |
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