| Autor: |
J.D. Garrett, S.J. Naftel, V.L. Smelyansky, T.K. Sham, John S. Tse |
| Rok vydání: |
1997 |
| Předmět: |
|
| Zdroj: |
Le Journal de Physique IV. 7:C2-495 |
| ISSN: |
1155-4339 |
| Popis: |
We report angular dependent X-ray absorption measurements at the Mo L 3,2 edge and the Si K-edge for a MoSi 2 single crystal. The crystal was oriented so that an azimuthal rotation of the crystal about the surface normal (direction of the incident photons) would align the c-axis of the crystal anywhere between parallel and perpendicular to the polarization of the photons. It was found that while the Mo L 3,2 edge XANES shows little angular dependence, the Si K-edge XANES shows a very strong polarization dependence of which the intensity exhibits a two-fold symmetry. This angular dependence of the Si K-edge XANES is attributed to the high densities of unoccupied states localized perpendicular to the Si-Si bond. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
