SiF2as a primary desorption product of Si etching by F atoms: Interpretation of laser‐induced fluorescence spectra; rate constant of the gas phase SiF2+F reaction

Autor:	D. Vermeylen, S. Vanhaelemeersch, Jozef Peeters, J. Van Hoeymissen
Rok vydání:	1991
Předmět:	Reaction rate constant chemistry Excited state Analytical chemistry General Physics and Astronomy chemistry.chemical_element Molecule Laser-induced fluorescence Isotropic etching Helium Fluorescence spectroscopy Spectral line
Zdroj:	Journal of Applied Physics. 70:3892-3898
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.349197
Popis:	Using a laser‐induced fluorescence technique, SiF2 radicals are detected as primary gas‐phase products of the chemical etching of silicon by fluorine atoms. The bending frequencies for the lower (X 1A1) and the excited (A 1B1) state of the SiF2 molecule are determined from the observed excitation and fluorescence spectra and are in close agreement with literature. The v‘2 intensity distribution of the fluorescence spectra corroborates the assignment of the upper‐state vibrational levels. In a second series of experiments, the rate constant for the SiF2+F reaction at room temperature was measured: k = (5 ± 1) × 10−13 cm3 molecule−1 s−1 at pressures of 1–5 Torr helium. The absence of pressure dependence is rationalized in terms of radiative deactivation of the SiF*3 product.
Databáze:	OpenAIRE
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