Growth and Characterization of High-Quality, Relaxed In y Ga1−y N Templates for Optoelectronic Applications
| Autor: | Nadia A. El-Masry, D. M. Van Den Broeck, Salah M. Bedair, D. Bharrat, Z. Liu |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Photoluminescence Solid-state physics business.industry Scanning electron microscope chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry law Solar cell Materials Chemistry Optoelectronics Electrical and Electronic Engineering Dislocation business Quantum well Indium |
| Zdroj: | Journal of Electronic Materials. 44:4161-4166 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-015-3989-9 |
| Popis: | Thick, high-quality InGaN layers can be used as templates for quantum well strain reduction in light-emitting diodes and as optical absorption layers in solar cell structures. Current InGaN growth technology, however, is primarily limited by V-pit formation and non-uniform indium composition. We report the growth and characterization of thick, strain-relaxed In y Ga1− y N layers, with 0.08 ≤ y ≤ 0.11, by metal organic chemical vapor deposition using the semibulk approach, which consists in periodic insertion of 2-nm GaN interlayers into the bulk In y Ga1− y N structure; these are then spike-annealed at 1000°C. Photoluminescence, x-ray diffraction, and scanning electron and atomic force microscopy revealed that the semibulk In y Ga1− y N had optical and electrical properties superior to those of conventional bulk In y Ga1− y N grown at the same temperature. Homogeneous indium content and substantial reduction of V-pit density were observed for the semibulk In y Ga1− y N films, even when grown above the critical layer thickness. Double-crystal x-ray diffraction rocking curves also revealed a one order of magnitude reduction of screw dislocation density in the semibulk In y Ga1− y N film compared with the bulk In y Ga1− y N film. |
| Databáze: | OpenAIRE |
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