Investigation of Line-edge Roughness Effects on Electrical Characteristics of Nanowire Tunnel FETs and MOSFETs

Autor:	Sangwan Kim, Jang Hyun Kim, Seong-Su Shin, Min Gyu Lee
Rok vydání:	2020
Předmět:	Materials science business.industry Nanowire Optoelectronics Electrical and Electronic Engineering business Line edge roughness Electronic Optical and Magnetic Materials
Zdroj:	JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:41-46
ISSN:	2233-4866 1598-1657
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8f60602597db54928734ce04f426186e https://doi.org/10.5573/jsts.2020.20.1.041 Zobrazit plný text záznamu