Phase transition in sputtered HfO2 thin films: A qualitative Raman study
| Autor: | F. Nakagomi, S.W. da Silva, Douglas A. Buchanan, A. Minko, G. S. Belo, Paulo C. Morais |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Amorphous solid chemistry.chemical_compound Tetragonal crystal system symbols.namesake chemistry Sputtering symbols Crystallite Thin film Raman spectroscopy Hafnium dioxide |
| Zdroj: | Applied Surface Science. 261:727-729 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2012.08.088 |
| Popis: | In this work the results of Linear Raman Spectroscopy experiments on hafnium dioxide (HfO2) thin films deposited by magnetron sputtering using different deposition conditions and post-deposition annealing are reported. Raman bands were identified considering the active symmetry modes expected from a tetragonal or monoclinic phase. The as-deposited HfOx films sputtered from an Hf target exhibit a tetragonal phase, which may be due to a crystallite size effect. However, the as-deposited HfOx films from the HfO2 target is found to be amorphous. As these films are annealed, these films remain or begin to become amorphous. However, at 600 °C they both begin to crystallize into a stable monoclinic phase. |
| Databáze: | OpenAIRE |
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