Characterization of the buffer layer in SiC heteroepitaxy
| Autor: | R. Berjoan, J.L. Ponthenier, B. Cros, N. Bécourt, A.M. Papon, C. Jaussaud |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Morphology (linguistics) Atmospheric pressure General Physics and Astronomy Mineralogy Surfaces and Interfaces General Chemistry Condensed Matter Physics Epitaxy Buffer (optical fiber) Surfaces Coatings and Films Chemical engineering Interphase Spectroscopy Layer (electronics) Pyrolysis |
| Zdroj: | Applied Surface Science. 68:461-466 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(93)90227-3 |
| Popis: | Buffer layers of SiC for heteroepitaxy of SiC were grown on Si(100) substrates by pyrolysis of C 3 H 8 diluted in H 2 as carrier gas, at atmospheric pressure. The composition profile and the interphase morphology have been studied by AES, TEM (XTEM, HREM) and ellipsometric spectroscopy. The buffer layer grown at 1200°C presents a steep composition gradient and allows the growth of a high-quality epitaxial film. The buffer layer grown at 1340°C reveals a more spread and irregular profile, with the formation of SiC inclusions in the Si substrate. It leads to an epitaxial film of poorer crystalline quality. |
| Databáze: | OpenAIRE |
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